Title
Modelovanje promena napona praga r-kanalnih VDMOS tranzistora snage izazvanih različitim tipovima naprezanja
Creator
Mitrović, Nikola, 1994-
CONOR:
87385097
Copyright date
2025
Object Links
Select license
Autorstvo-Nekomercijalno-Bez prerade 3.0 Srbija (CC BY-NC-ND 3.0)
License description
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Language
Serbian
Cobiss-ID
Theses Type
Doktorska disertacija
description
Datum odbrane: 2.12.2025.
Other responsibilities
predsednik komisije
Prijić, Zoran
član komisije
Manić, Ivica
član komisije
Ristić, Goran
član komisije
Đorić Veljković, Snežana
Academic Expertise
Tehničko-tehnološke nauke
University
Univerzitet u Nišu
Faculty
Elektronski fakultet
Group
Katedra za mikroelektroniku
Alternative title
Modelling of threshold voltage shift of p-channel power VDMOS transistors induced with different types of stressing
Publisher
[N. I. Mitrović]
Format
166 listova
description
Biografija autora sa bibliografijom: list. 158-166
Bibliografija: list. 140-157
description
Microelectronics and Microsystems
Abstract (en)
In this dissertation, the analysis and development of the model
of the threshold voltage shift of p-channel power VDMOS
transistors induced with different types of stressing is presented.
Types of stresses include static negative bias temperature
stressing, pulsed negative bias temperature stressing, irradiation
and magnetic field. For each type of stressing, under
different experiment conditions, several equivalent electrical
circuits for modelling of threshold voltage shift are presented.
Values of the elements of the electrical circuits are related
to the experimental conditions through in detail explained
mathematical relations. Validation of the equivalent circuit
models is performed through calculation of absolute and relative
error between experimental and modelled results. The
analysis in certain parts also includes the application of the
proposed models to other types of p-channel transistors. The
developed models will enable the assessment of the value of
the threshold voltage during operation, thereby enabling prediction
of device lifetime. Analysis and conclusions are based
on experimental measurements, automated data processing
Python scripts, numerical simulations and simulation results
using the LTspice software.
Authors Key words
modelovanje, napon praga, VDMOSFET, ekvivalentno ko-
lo, simulacija
Authors Key words
modelling, threshold voltage, VDMOSFET, equivalent circuit,
simulation
Classification
(621.382.3+621.3.049.77):004.414.23
Subject
T171 Microelectronics
Type
Tekst
Abstract (en)
In this dissertation, the analysis and development of the model
of the threshold voltage shift of p-channel power VDMOS
transistors induced with different types of stressing is presented.
Types of stresses include static negative bias temperature
stressing, pulsed negative bias temperature stressing, irradiation
and magnetic field. For each type of stressing, under
different experiment conditions, several equivalent electrical
circuits for modelling of threshold voltage shift are presented.
Values of the elements of the electrical circuits are related
to the experimental conditions through in detail explained
mathematical relations. Validation of the equivalent circuit
models is performed through calculation of absolute and relative
error between experimental and modelled results. The
analysis in certain parts also includes the application of the
proposed models to other types of p-channel transistors. The
developed models will enable the assessment of the value of
the threshold voltage during operation, thereby enabling prediction
of device lifetime. Analysis and conclusions are based
on experimental measurements, automated data processing
Python scripts, numerical simulations and simulation results
using the LTspice software.
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