Title
Uticaj fotogenerisanih nosilaca naelektrisanja na termalne i elastične osobine silicijuma n-tipa
Creator
Markušev, Dragana K., 1973-, 70033417
Copyright date
2021
Object Links
Select license
Autorstvo-Nekomercijalno-Bez prerade 3.0 Srbija (CC BY-NC-ND 3.0)
License description
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Language
Serbian
Cobiss-ID
Theses Type
Doktorska disertacija
description
Datum odbrane: 05.05.2021.
Other responsibilities
mentor
Aleksić, Sanja
član komisije
Paunović, Vesna
član komisije
Galović, Slobodanka
član komisije
Davidović, Vojkan
član komisije
Pantić, Dragan
Academic Expertise
Prirodno-matematičke nauke
Academic Title
-
University
Univerzitet u Nišu
Faculty
Elektronski fakultet
Group
Katedra za elektroniku
Alternative title
The influence of the photogenerated charge carriers on the thermal and elastic properties of the n-type silicon
Publisher
[D. Т. Мarkušev]
Format
130 str.
description
Microelectronics and Microsystems
Abstract (en)
This thesis presents a complete theoretical and experimental analysis
of the influence of photogenerated carriers on the dynamic component
of temperature distribution and the thermoelastic component of n-type
silicon photoacoustic signal illuminated by a modulated
monochromatic light source for modulation frequencies ranging from:
1 Hz to 107 Hz (theory) and 20 Hz to 20 kHz (experiment). Analyzes
were performed for different sample thicknesses, different surface
qualities and different carrier lifetimes. Most of the analysis is based
on comparing the amplitude and phase of temperature and
photoacoustic signals with and without the presence of
photogenerated carriers. Special attention was paid to finding
characteristic patterns of behaviour that were observed through the
presence of clearly expressed peaks of the amplitude ratio and phase
differences between the temperatures on the front and back surface of
the sample. The existence of these peaks can be interpreted as
unambiguous indicators of the presence of photogenerated carriers in
a semiconductor sample. It was noticed that similar structures in the
form of peaks occur at the amplitudes of the thermoelastic component
of the photoacoustic signal so that the peaks are more intense in
samples whose thickness is less than the value of the diffusion length
of the carriers, ie. in plasma-thin samples. Higher peak intensity
implies a decrease in the value of the amplitude of the thermoelastic
component of the photoacoustic signal at lower modulation
frequencies, which makes this component "invisible" for observation
in a real experiment. The results presented in this thesis indicate that
this decrease in the amplitude of the thermoelastic component can be
reflected in the change of the sample thermoelastic response, ie.
different intensities of its bending. The potential application of this
research can be found within the sensitivity control of Micro-electromechanical
systems (MEMS). By illuminating the membranes, they
can change their thermoelastic properties, ie. flexibility, and thus the
sensitivity of the device itself.
Authors Key words
Mikroelektronika, mikrosistemi, poluprovodnici,
fotogenerisani nosioci, fotoakustika, svetlosna pobuda, zvuk,
temperaturne raspodele, termoelastični efekti
Authors Key words
Microelectronics, microsystems, semiconductors, photogenerated
carriers, photoacoustics, light excitation, sound, temperature
distributions, thermoelastic effects
Classification
621.3.049.77+[536.2:535.247(043.3)
Subject
T 171
Type
Tekst
Abstract (en)
This thesis presents a complete theoretical and experimental analysis
of the influence of photogenerated carriers on the dynamic component
of temperature distribution and the thermoelastic component of n-type
silicon photoacoustic signal illuminated by a modulated
monochromatic light source for modulation frequencies ranging from:
1 Hz to 107 Hz (theory) and 20 Hz to 20 kHz (experiment). Analyzes
were performed for different sample thicknesses, different surface
qualities and different carrier lifetimes. Most of the analysis is based
on comparing the amplitude and phase of temperature and
photoacoustic signals with and without the presence of
photogenerated carriers. Special attention was paid to finding
characteristic patterns of behaviour that were observed through the
presence of clearly expressed peaks of the amplitude ratio and phase
differences between the temperatures on the front and back surface of
the sample. The existence of these peaks can be interpreted as
unambiguous indicators of the presence of photogenerated carriers in
a semiconductor sample. It was noticed that similar structures in the
form of peaks occur at the amplitudes of the thermoelastic component
of the photoacoustic signal so that the peaks are more intense in
samples whose thickness is less than the value of the diffusion length
of the carriers, ie. in plasma-thin samples. Higher peak intensity
implies a decrease in the value of the amplitude of the thermoelastic
component of the photoacoustic signal at lower modulation
frequencies, which makes this component "invisible" for observation
in a real experiment. The results presented in this thesis indicate that
this decrease in the amplitude of the thermoelastic component can be
reflected in the change of the sample thermoelastic response, ie.
different intensities of its bending. The potential application of this
research can be found within the sensitivity control of Micro-electromechanical
systems (MEMS). By illuminating the membranes, they
can change their thermoelastic properties, ie. flexibility, and thus the
sensitivity of the device itself.
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